3332_3335_Spec Sheet_Jan74 3332 3335 Spec Sheet Jan74
2N3906 Spec Sheet. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:
200 ma) low voltage (max. Silicon epitaxial planar npn transistor. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: Microdot may be in either location). Web product specification transistor 2n3906 features pinning low current (max. This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Web pnp general purpose amplifier.
Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note: 200 ma) low voltage (max. Microdot may be in either location). This device is designed for general purpose amplifier and switching applications at collector currents of 10 ma to 100 ma. Silicon epitaxial planar npn transistor. Web pnp general purpose amplifier. Web product specification transistor 2n3906 features pinning low current (max. Web bent lead tape & reel ammo pack marking diagram 2n 3906 alyw a = assembly location l = wafer lot y = year w = work week = pb−free package (note:
